to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
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? 2001 mos field effect transistor pa1950 p-channel mos field effect transistor for switching data sheet document no. g15620ej2v0ds00 (2nd edition) date published january 2002 ns cp(k) printed in japan description the pa1950 is a switching device which can be driven directly by a 1.8 v power source. this device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features ? 1.8 v drive available ? low on-state resistance r ds(on)1 = 130 m ? max. (v gs = ?4.5 v, i d = ?1.5 a) r ds(on)2 = 176 m ? max. (v gs = ?3.0 v, i d = ?1.5 a) r ds(on)3 = 205 m ? max. (v gs = ?2.5 v, i d = ?1.5 a) r ds(on)4 = 375 m ? max. (v gs = ?1.8 v, i d = ?1.0 a) ordering information part number package pa1950te note sc-95 (mini mold thin type) note marking: tm absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss ?12 v gate to source voltage (v ds = 0 v) v gss m 8.0 v drain current (dc) (t a = 25c) i d(dc) m 2.5 a drain current (pulse) note1 i d(pulse) m 7.0 a total power dissipation (2unit) note2 p t1 1.15 w total power dissipation (1unit) note2 p t2 0.57 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on fr-4 board, t 5 sec. remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 2.8 0.2 1.5 0.95 123 654 1.9 2.9 0.2 0.32 +0.1 ?0.05 0.95 0.65 +0.1 ?0.15 6: drain1 1: gate1 5: source1 4: drain2 3: gate2 2: source2 equivalent circuit source 1 body diode gate protection diode gate 1 drain 1 source 2 body diode gate protection diode gate 2 drain 2 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information.
data sheet g15620ej2v0ds 2 pa1950 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ?12 v, v gs = 0 v ?10 a gate leakage current i gss v gs = ! 8.0 v, v ds = 0 v ! 10 a gate cut-off voltage v gs(off) v ds = ?10 v, i d = ?1.0 ma ?0.45 ?1.5 v forward transfer admittance | y fs |v ds = ?10 v, i d = ?1.5 a1.0 s drain to source on-state resistance r ds(on)1 v gs = ?4.5 v, i d = ?1.5 a 105 130 m r ds(on)2 v gs = ?3.0 v, i d = ?1.5 a 135 176 m r ds(on)3 v gs = ?2.5 v, i d = ?1.5 a 160 205 m r ds(on)4 v gs = ?1.8 v, i d = ?1.0 a 225 375 m input capacitance c iss v ds = ?10 v 220 pf output capacitance c oss v gs = 0 v 90 pf reverse transfer capacitance c rss f = 1.0 mhz 40 pf turn-on delay time t d(on) v dd = ?6.0 v, i d = ?1.5 a15ns rise time t r v gs = ?4.0 v80ns turn-off delay time t d(off) r g = 10 150 ns fall time t f 120 ns total gate charge q g v dd = ?10 v1.9nc gate to source charge q gs v gs = ?4.0 v0.5nc gate to drain charge q gd i d = ?2.5 a0.7nc body diode forward voltage v f(s-d) i f = 2.5 a, v gs = 0 v 0.86 v test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs( ) d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs( ) v ds( ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet g15620ej2v0ds 3 pa1950 typical characteristics (t a = 25c) 30 150 60 90 20 60 80 40 0 100 120 derating factor of forward bias safe operating area dt - derating factor - % t a - ambient temperature - ?c 0 gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ? c v gs(off) - gate to source cut-off voltage - v v ds = 10 v i d = 1 ma 50 50 100 0 150 1.5 1.0 0.5 0.0 drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0.2 0.0 0.8 1.0 0.4 0.6 10 2 4 6 8 0 pulsed 4.0 v v gs = 4.5 v 2.5 v 1.8 v 0.01 0.001 0.0001 0.00001 0.5 0 1.0 1.5 2.0 100 10 1 0.1 25 ? c 25 ? c 75 ? c t a = 125 ? c v gs - gate to sorce voltage - v v ds = 10 v forward transfer characteristics i d - drain current - a 1 10 100 0.1 v ds = 10v i d - drain current - a | y fs | - forward transfer admittance - s 1 10 0.1 0.01 0.01 100 t a = 125 ? c 75 ? c 25 ? c 25 ? c forward transfer admittance vs. drain current forward bias safe operating area 10 100 i d - drain current - a 1 v ds - drain to source voltage - v 100 10 1 0.1 0.1 0.01 100 ms 5 s (1 unit) 5 s (2 units) 10 ms pw = 1 ms r ds(on) limited (v gs = 4.5 v) i d (pulse) i d ( dc ) single pulse mounted on 250 mm x 35 m copper pad connected to drain electrode in 50 mm x 50 mm x 1.6 mm fr-4 board 2
data sheet g15620ej2v0ds 4 pa1950 0 0 100 200 300 400 2 4 6 8 r ds (on) - drain to source on-state resistance - m v gs - gate to source voltage - v i d = 1.5 a drain to source on-state resistance vs. gate to source voltage drain to source on-state resistance vs. drain current 1 0.1 0.01 10 i d - drain current - a r ds(on) - drain to source on-state resistance - m t a = 125 ? c 75 ? c 25 ? c 400 350 300 250 200 150 v gs = 1.8 v 25 ? c drain to source on-state resistance vs. drain current 1 0.1 0.01 10 i d - drain current - a r ds(on) - drain to source on-state resistance - m t a = 125 ? c 25 ? c 300 v gs = 2.5 v 25 ? c 100 150 200 250 75 ? c drain to source on-state resistance vs. drain current 1 0.1 0.01 10 i d - drain current - a r ds(on) - drain to source on-state resistance - m t a = 125 ? c 75 ? c 25 ? c 25 ? c 200 150 100 v gs = 4.5 v 50 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ? c i d = 1.5 a 50 0 50 100 150 0 200 100 400 300 r ds (on) - drain to source on-state resistance - m v gs = 1.8 v 2.5 v 3.0 v 4.5 v drain to source on-state resistance vs. drain current 1 0.1 0.01 10 i d - drain current - a r ds(on) - drain to source on-state resistance - m t a = 125 ? c 25 ? c 250 v gs = 3.0 v 50 100 150 200 75 ? c 25 ? c
data sheet g15620ej2v0ds 5 pa1950 capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 10 0.1 100 1000 1 10 100 f = 1 mhz v gs = 0 v c iss c rss c oss 0.01 0.1 1 10 100 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 source to drain diode forward voltage i f - diode forward current - a v f(s-d) - source to drain voltage - v 0.1 1.0 10 i d - drain current - a t d(on) , t r , t d(off) , t f - switchig time - ns 100 1000 10 1 t d(off) t d(on) t f t r switching characteristics v dd = 6.0 v v gs(on) = 4.0 v r g = 10 q g - gate charge - nc dynamic input/output characteristics v gs - gate to source voltage - v 5 4 3 2 1 0 i d = 2.5 a 0 0.4 0.8 1.2 1.6 2.0 v dd = 10 v 6 v transient thermal resistance vs. pulse width pw - pulse width - s r th(ch-a) - transient thermal resistance - ? c/w single pulse p d (fet1) : p d (fet2) = 1:1 p d (fet1) : p d (fet2) = 1:0 0.01 0.001 0.1 110 1000 100 10 1 1000 100 mounted on fr-4 board of 50 cm 2 x 1.1 mm
data sheet g15620ej2v0ds 6 pa1950 [memo]
data sheet g15620ej2v0ds 7 pa1950 [memo]
pa1950 m8e 00. 4 the information in this document is current as of january, 2002. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).
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